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Method of Selective etching of heavily doped wide-bandgap semiconductosr substrates using Electro Chemical Etching process for different device applications
RPI ID: 2014-023-401 Innovation Summary:This technology presents a method for selectively etching semiconductor layers using electrochemical processing. It targets layers with enhanced conductivity, enabling controlled porosity modification and removal. The technique uses anodic oxidation to create a porous region that can be selectively removed. This...
Published: 7/21/2025
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Updated: 7/3/2025
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Inventor(s): Ishwara Bhat, Tat-Sing Chow, Rajendra Dahal
Keywords(s): Chip manufacturing, Diodes, Doping, Electronics, Engineering, Etching, Material science, Multi-layer, Porosity, Semiconductors
Category(s): Computational Science and Engineering
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Electrophoretic deposition of nano/micro particles in deep trenches or holes for radiation detection and imaging applications
RPI ID: 2014-066-402Innovation Summary:This invention provides a method to fabricate radiation-detecting semiconductor structures using electrophoretic deposition. Traditional techniques like reactive ion etching (RIE) and chemical vapor deposition (CVD) are complex and costly, often requiring high-temperature processing. This approach simplifies the...
Published: 7/21/2025
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Updated: 7/3/2025
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Inventor(s): Ishwara Bhat, Rajendra Dahal, Yaron Danon, Jian-Qiang "James" Lu
Keywords(s): Devices/Circuits, electrophoretic deposition, Semiconductors, Solid state radiation detectors
Category(s): Nanotechnology and Advanced Materials
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Methods of fabricating h-BN solid state neutron detector and related applications
RPI ID: 2014-068-402Innovation Summary:This technology enables the formation of radiation-sensitive semiconductor layers directly within etched trenches on a substrate. Instead of depositing materials using bulk coating methods, the invention forms epitaxial semiconductor layers along trench sidewalls, enhancing detection sensitivity. It uses hexagonal...
Published: 7/21/2025
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Updated: 7/3/2025
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Inventor(s): Ishwara Bhat, Rajendra Dahal, Yaron Danon, Jian-Qiang "James" Lu
Keywords(s): batteries, Chemical Engineering, Electrochemical, Energy, Mechanical Devices & Systems, Nanomaterials, Nanotechnology, Nanotechnology & Science, Polymer Chemistry
Category(s): Energy, Environment and Smart Systems
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Conformal Boron filling in high aspect ratio deep holes by Chemical Vapor Deposition (CVD) using different boron precursors for solid state neutron detection and related applications
RPI ID: 2013-012-201 & 2013-012-601Innovation Summary:This dual-invention brief introduces advanced solid-state neutron detection systems and fabrication methods that offer compact, efficient, and scalable alternatives to traditional gas-based detectors. These devices utilize wide-bandgap semiconductor materials such as gallium nitride (GaN), integrated...
Published: 7/21/2025
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Updated: 7/3/2025
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Inventor(s): Ishwara Bhat, Rajendra Dahal, Yaron Danon, Kuan-Chih Huang, Ning Lu
Keywords(s):
Category(s): Energy, Environment and Smart Systems
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