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Method of Selective etching of heavily doped wide-bandgap semiconductosr substrates using Electro Chemical Etching process for different device applications
RPI ID: 2014-023-401 Innovation Summary:This technology presents a method for selectively etching semiconductor layers using electrochemical processing. It targets layers with enhanced conductivity, enabling controlled porosity modification and removal. The technique uses anodic oxidation to create a porous region that can be selectively removed. This...
Published: 7/21/2025
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Updated: 7/3/2025
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Inventor(s): Ishwara Bhat, Tat-Sing Chow, Rajendra Dahal
Keywords(s): Chip manufacturing, Diodes, Doping, Electronics, Engineering, Etching, Material science, Multi-layer, Porosity, Semiconductors
Category(s): Computational Science and Engineering
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