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Method of Selective etching of heavily doped wide-bandgap semiconductosr substrates using Electro Chemical Etching process for different device applications
RPI ID: 2014-023-401 Innovation Summary:This technology presents a method for selectively etching semiconductor layers using electrochemical processing. It targets layers with enhanced conductivity, enabling controlled porosity modification and removal. The technique uses anodic oxidation to create a porous region that can be selectively removed. This...
Published: 7/21/2025
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Updated: 7/3/2025
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Inventor(s): Ishwara Bhat, Tat-Sing Chow, Rajendra Dahal
Keywords(s): Chip manufacturing, Diodes, Doping, Electronics, Engineering, Etching, Material science, Multi-layer, Porosity, Semiconductors
Category(s): Computational Science and Engineering
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A High Voltage (>100 V) Lateral Trench Power MOSFET with Low Specific-on-resistance
RPI ID: 2006-015-201Innovation Summary: This invention presents a high-voltage lateral trench power MOSFET with low specific on-resistance. It features a gate electrode embedded in a trench structure to enhance electric field distribution and breakdown voltage. The design improves switching performance and energy efficiency. It is suitable for power...
Published: 7/21/2025
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Updated: 7/3/2025
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Inventor(s): Tat-Sing Chow, Kamal Raj Varadarajan
Keywords(s):
Category(s): Computational Science and Engineering
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New Technique for Introducing Varying Lateral Charge in Multiple Zone Junction Termination Extension of Semiconductor Devices
RPI ID: 2004-045-202Innovation Summary:This invention introduces a semiconductor device featuring a graded junction termination extension (JTE) structure that enhances high-voltage performance and reliability. The method involves forming a semiconductor layer with a pn junction and applying a mask layer that is etched to create multiple laterally adjacent...
Published: 7/21/2025
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Updated: 7/3/2025
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Inventor(s): Santhosh Balachandran, Tat-Sing Chow, Peter Losee
Keywords(s): Fuel Cell, Stack Engineering
Category(s): Computational Science and Engineering
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