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A High Voltage (>100 V) Lateral Trench Power MOSFET with Low Specific-on-resistance
RPI ID: 2006-015-201Innovation Summary: This invention presents a high-voltage lateral trench power MOSFET with low specific on-resistance. It features a gate electrode embedded in a trench structure to enhance electric field distribution and breakdown voltage. The design improves switching performance and energy efficiency. It is suitable for power...
Published: 7/21/2025
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Updated: 7/3/2025
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Inventor(s): Tat-Sing Chow, Kamal Raj Varadarajan
Keywords(s):
Category(s): Computational Science and Engineering
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