RPI ID: 2006-015-201

Innovation Summary:
This invention presents a high-voltage lateral trench power MOSFET with low specific on-resistance. It features a gate electrode embedded in a trench structure to enhance electric field distribution and breakdown voltage. The design improves switching performance and energy efficiency. It is suitable for power management in automotive and industrial systems.

Challenge/Opportunity:
Power devices must balance high voltage tolerance with low resistance and fast switching. Traditional MOSFETs face limitations in efficiency and thermal performance. This invention offers a novel trench structure that enhances both electrical and thermal characteristics. It opens opportunities in power electronics and energy systems.

Key Benefits / Advantages:
✔ Low on-resistance
✔ High breakdown voltage
✔ Improved switching speed
✔ Compact lateral design

Applications:
• Power management
• Automotive electronics
• Industrial control systems
• Renewable energy converters

Keywords:
#Power MOSFET #trench gate #high voltage #low resistance #energy efficiency

Intellectual Property:
US Issued Patent 8159024