Method of Selective etching of heavily doped wide-bandgap semiconductosr substrates using Electro Chemical Etching process for different device applications | Available Intellectual Property | Rensselaer Polytechnic Institute

Method of Selective etching of heavily doped wide-bandgap semiconductosr substrates using Electro Chemical Etching process for different device applications

RPI ID: 2014-023-401

Innovation Summary:
This technology presents a method for selectively etching semiconductor layers using electrochemical processing. It targets layers with enhanced conductivity, enabling controlled porosity modification and removal. The technique uses anodic oxidation to create a porous region that can be selectively removed. This process allows for precision structuring in multilayer devices without damaging adjacent layers. It supports improved fabrication for high-performance electronics, LEDs, and sensors.

Challenges / Opportunities:
Conventional etching processes lack selectivity or can damage adjacent layers in complex stacks. This invention offers a solution for fabricating complex semiconductor structures with high accuracy. It is especially valuable in MEMS, photonics, and next-gen transistor architectures.

Key Benefits / Advantages:
✔ High selectivity in multilayer etching
✔ Low thermal and mechanical stress
✔ Compatible with advanced semiconductor processes

Applications:
• MEMS fabrication
• LED and photonic device processing
• Advanced transistor manufacturing

Keywords:
#semiconductors #etching #electrochemical #micromachining #MEMS

Intellectual Property:
US 9,922,838 B2