RPI ID: 2013-012-201 & 2013-012-601

Innovation Summary:
This dual-invention brief introduces advanced solid-state neutron detection systems and fabrication methods that offer compact, efficient, and scalable alternatives to traditional gas-based detectors. These devices utilize wide-bandgap semiconductor materials such as gallium nitride (GaN), integrated with neutron-reactive layers like boron-10 or lithium-6, to detect neutron interactions through charge carrier generation. The architecture supports direct electrical readout, high neutron sensitivity, and robust operation in harsh environments, making it ideal for modern radiation sensing applications.

Challenges / Opportunities:
Conventional neutron detectors, such as helium-3 tubes, are bulky, expensive, and increasingly unsustainable due to helium-3 scarcity. These inventions address these limitations by offering solid-state, miniaturized solutions that are compatible with standard semiconductor fabrication techniques. They open new opportunities in nuclear security, reactor diagnostics, medical imaging, and space exploration, where compact, reliable, and integrable neutron detection is essential.

Key Benefits / Advantages:
✔ Compact, solid-state design with high neutron sensitivity
✔ Eliminates reliance on scarce helium-3 gas
✔ Radiation-hardened and suitable for extreme environments
✔ Scalable fabrication using semiconductor processing techniques
✔ Low gamma-ray interference and integrable with electronics

Applications:
• Nuclear nonproliferation and homeland security
• Neutron imaging and spectroscopy
• Reactor core monitoring and diagnostics
• Space-based radiation detection and dosimetry

Keywords:
#NeutronDetector #SolidStateDetector #RadiationSensing #SemiconductorDevices #NuclearSecurity

Intellectual Property:
US Issued Patents US9151853 B2 and US9406833