Methods of fabricating h-BN solid state neutron detector and related applications
RPI ID: 2014-068-402Innovation Summary:This technology enables the formation of radiation-sensitive semiconductor layers directly within etched trenches on a substrate. Instead of depositing materials using bulk coating methods, the invention forms epitaxial semiconductor layers along trench sidewalls, enhancing detection sensitivity. It uses hexagonal...
Published: 7/21/2025
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Updated: 7/3/2025
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Inventor(s): Ishwara Bhat, Rajendra Dahal, Yaron Danon, Jian-Qiang "James" Lu
Keywords(s): batteries, Chemical Engineering, Electrochemical, Energy, Mechanical Devices & Systems, Nanomaterials, Nanotechnology, Nanotechnology & Science, Polymer Chemistry
Category(s): Energy, Environment and Smart Systems
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