RPI ID: 2014-068-402

Innovation Summary:
This technology enables the formation of radiation-sensitive semiconductor layers directly within etched trenches on a substrate. Instead of depositing materials using bulk coating methods, the invention forms epitaxial semiconductor layers along trench sidewalls, enhancing detection sensitivity. It uses hexagonal boron nitride as a radiation-responsive material, aligned with the trench structure to optimize interaction with incident particles. The orientation and atomic structure of the sidewalls assist in precision growth of the detection layer. This process allows high aspect-ratio trench filling with minimal defect density, ideal for solid-state detector applications. It supports development of next-generation, miniaturized detectors that offer high signal-to-noise ratios and radiation selectivity.

Challenges / Opportunities:
Conventional radiation detectors are bulky or use fabrication methods incompatible with large-scale semiconductor processing. This invention allows monolithic integration of detectors into CMOS-compatible chips, paving the way for integrated sensor platforms. There is strong demand for deployable radiation sensors in defense, healthcare, and environmental sectors. This process meets those needs with scalable manufacturing and customizable detection capabilities.

Key Benefits / Advantages:
✔ Monolithic integration with semiconductor chips
✔ Epitaxial growth with low defect density
✔ Directional detection efficiency

Applications:
• Solid-state radiation sensors
• Integrated defense and security electronics
• High-resolution nuclear imaging systems

Keywords:
#epitaxy #radiationsensing #hexagonalboronnitride #CMOSintegration

Intellectual Property:
US Issued Patent US 11,677,041 B2