RPI ID: 2014-066-402

Innovation Summary:
This invention provides a method to fabricate radiation-detecting semiconductor structures using electrophoretic deposition. Traditional techniques like reactive ion etching (RIE) and chemical vapor deposition (CVD) are complex and costly, often requiring high-temperature processing. This approach simplifies the process by electrochemically etching cavities into a semiconductor substrate and filling them with radiation-detecting material via electrophoresis. The technique allows fabrication at room temperature, avoids toxic process gases, and improves fill ratios. By increasing the density of radiation-sensitive material in the structure, the device becomes more effective for detecting nuclear particles like neutrons and gamma rays. It also supports scalable, high-throughput production, making it well-suited for field-deployable sensors.

Challenges / Opportunities:
Many existing radiation detectors rely on bulky or fragile materials that are difficult to fabricate and integrate. The need for compact, solid-state alternatives is increasing, especially for national security and environmental monitoring. This invention meets that demand with a fabrication method that is more economical, scalable, and adaptable to different radiation-sensitive materials. It enables the widespread deployment of portable sensors in public infrastructure and transportation hubs.

Key Benefits / Advantages:
✔ Room-temperature fabrication
✔ High fill ratios of detecting material
✔ Eliminates toxic process steps

Applications:
• Neutron and gamma ray detection
• National security and border control
• Portable radiation sensors

Keywords:
#radiationdetector #electrophoreticdeposition #semiconductorfabrication

Intellectual Property:
US Issued Patent 9,810,794 B2