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Electrophoretic deposition of nano/micro particles in deep trenches or holes for radiation detection and imaging applications
RPI ID: 2014-066-402Innovation Summary:This invention provides a method to fabricate radiation-detecting semiconductor structures using electrophoretic deposition. Traditional techniques like reactive ion etching (RIE) and chemical vapor deposition (CVD) are complex and costly, often requiring high-temperature processing. This approach simplifies the...
Published: 7/21/2025
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Updated: 7/3/2025
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Inventor(s): Ishwara Bhat, Rajendra Dahal, Yaron Danon, Jian-Qiang "James" Lu
Keywords(s): Devices/Circuits, electrophoretic deposition, Semiconductors, Solid state radiation detectors
Category(s): Nanotechnology and Advanced Materials
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