RPI ID: 2004-045-202

Innovation Summary:
This invention introduces a semiconductor device featuring a graded junction termination extension (JTE) structure that enhances high-voltage performance and reliability. The method involves forming a semiconductor layer with a pn junction and applying a mask layer that is etched to create multiple laterally adjacent steps. These steps correspond to different mask thicknesses and allow for precise control of dopant implantation. The result is a graded doping profile that reduces electric field crowding at the device edges, improving breakdown voltage and reducing leakage current. This approach is particularly beneficial for power electronics and high-voltage switching applications.

Challenges / Opportunities:
Traditional high-voltage semiconductor devices often suffer from premature breakdown due to edge effects and non-uniform electric fields. Existing termination techniques can be complex or inefficient. This invention addresses these issues by offering a scalable and manufacturable solution that improves device robustness without significantly increasing fabrication complexity. It opens opportunities in power management, electric vehicles, and industrial electronics where high-voltage reliability is critical.

Key Benefits / Advantages:
✔ Enhanced breakdown voltage through graded edge termination
✔ Reduced leakage current and improved device reliability
✔ Scalable fabrication using standard semiconductor processes
✔ Applicable to a wide range of high-voltage device architectures

Applications:
• Power electronics and converters
• High-voltage switching devices
• Electric vehicle power systems
• Industrial and aerospace electronics

Keywords:
#semiconductordevices #junctiontermination #highvoltage #powerdevices #gradeddoping

Intellectual Property:
US Issued Patent 7,144,797