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New Technique for Introducing Varying Lateral Charge in Multiple Zone Junction Termination Extension of Semiconductor Devices
RPI ID: 2004-045-202Innovation Summary:This invention introduces a semiconductor device featuring a graded junction termination extension (JTE) structure that enhances high-voltage performance and reliability. The method involves forming a semiconductor layer with a pn junction and applying a mask layer that is etched to create multiple laterally adjacent...
Published: 7/21/2025
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Updated: 7/3/2025
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Inventor(s): Santhosh Balachandran, Tat-Sing Chow, Peter Losee
Keywords(s): Fuel Cell, Stack Engineering
Category(s): Computational Science and Engineering
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