RPI ID: 2015-047-401

Innovation Summary:
This invention provides a method for controlling shuttle mass motion in MEMS (Micro-Electro-Mechanical Systems) devices using nanoscale sidewall stoppers. The process includes patterning a silicon substrate to form suspended structures such as a shuttle mass and anchor frame, followed by selective deposition using a shadow mask. A nanoscale stopper is then formed to constrain motion precisely at defined locations. This nanoscale control helps minimize overshoot and mechanical ringing, improving MEMS device reliability and repeatability. The fabrication method is compatible with conventional MEMS processing and does not require high-temperature steps or exotic materials. It can be integrated into accelerometers, gyroscopes, RF switches, and resonators. This approach enhances performance in high-precision sensing and actuation applications.

Challenges / Opportunities:
MEMS devices are often limited by uncontrolled mechanical oscillations or stiction that degrade performance. As device dimensions shrink, traditional mechanical stops become less effective and harder to fabricate. This invention addresses these issues by introducing nanoscale stoppers fabricated in a controlled and scalable manner. It allows for greater precision and robustness without sacrificing manufacturing compatibility. There is an opportunity to integrate this technology into next-generation sensors for aerospace, automotive, and mobile devices.

Key Benefits / Advantages:
✔ Sub-micron motion control
✔ Improved damping and response
✔ Compatible with MEMS fabrication processes

Applications:
• MEMS accelerometers and gyroscopes
• RF MEMS switches
• Micro-resonators

Keywords:
#MEMS #nanoscalecontrol #shuttlemass #motionlimiting

Intellectual Property:
US Issued Patent 10,858,241 B2