SILICON NITRIDE WAVEGUIDE COUPLED PHOTODIODE | Available Intellectual Property | Rensselaer Polytechnic Institute

SILICON NITRIDE WAVEGUIDE COUPLED PHOTODIODE

RPI ID: 2020-084-401

Innovation Summary:
A silicon nitride waveguide is integrated with a photodiode to enhance optical signal detection in photonic circuits. The design enables efficient coupling of light from the waveguide into the photodiode, improving responsivity and bandwidth. It supports CMOS-compatible fabrication and is suitable for high-speed data transmission. The structure is optimized for low-loss and compact integration.

Challenges / Opportunities:
Photonic integration requires efficient light coupling between components. This invention addresses coupling inefficiencies by aligning waveguide and photodiode geometries. It opens opportunities for scalable photonic chip manufacturing and improved optical interconnects. The system supports telecom and data center applications.

Key Benefits / Advantages:
✔ High responsivity photodiode
✔ Efficient waveguide coupling
✔ CMOS-compatible fabrication
✔ Compact integration
✔ Scalable for photonic chips

Applications:
• Optical communications
• Photonic integrated circuits
• Data center interconnects

Keywords:
#photodiodes #waveguidecoupling #siliconnitride #opticalinterconnects #photonics #CMOSintegration

Intellectual Property:
Issued US Application US12349472B2

Patent Information:
Inventors:
Mona Hella
Robert, Jr. Karlicek
Asif Chowdhury
Keywords:
avalanche photodiodes
photodiode
silicon nitride waveguide
silicon waveguide
For Information, Contact:
Natasha Sanford
Licensing Associate
Rensselaer Polytechnic Institute
sanfon@rpi.edu